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2SB634 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB634 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB634 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 40 320 hFE-2 DC Current Gain IC= -3A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 15 MHz hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 isc Website:www.iscsemi.cn 2 |
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