2SB595 datasheet(1/4 Pages) ISC

No de pièce	2SB595

Description	Silicon PNP Power Transistors

PDF	4 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB595

DESCRIPTION

・

・With TO-220C package

・Complement to type 2SD525

・High breakdown voltage :VCEO=-100V

・Low collector saturation volage

: VCE(sat)=-2.0V(Max)

APPLICATIONS

・Power amplifier applications

・Recommend for 30W high fidelity

audio frequency amplifier output stage

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-100

V

VCEO

Collector-emitter voltage

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-5

A

IE

Emitter current

-5

A

IB

Base current

-4

A

PC

Collectorl power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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