2SB531 datasheet(1/2 Pages) ISC

No de pièce	2SB531

Description	isc Silicon PNP Power Transistors

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SB531

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·High Power Dissipation-

: PC= 50W(Max)@TC=25℃

·Complement to Type 2SD371

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-6

A

IE

Emitter Current-Continuous

6

A

PC

Collector Power Dissipation

@TC=25℃

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

isc Website：www.iscsemi.cn

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