2N6569 datasheet(1/3 Pages) ISC

No de pièce	2N6569

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6569

DESCRIPTION

・With TO-3 package

・Complement to type 2N6594

・Wide area of safe operation

APPLICATIONS

・Designed for low voltage amplifier

power switching applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

45

V

VCEO

Collector-emitter voltage

Open base

40

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

12

A

ICM

Collector current-peak

24

A

IB

Base current

5

A

IE

Emitter current

17

A

IEM

Emitter current-peak

34

A

PC

Collector power dissipation

TC=25℃

100

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

Fig.1 simplified outline (TO-3) and symbol

Numéro de pièce similaire - 2N6569

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	2N6569	144Kb / 3P	POWER TRANSISTORS(12A,40V,100W)
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2N6569 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

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