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2N6477 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2N6477
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6477 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6477 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6477 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6477 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N6477 2N6478
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6477
120
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6478
IC=0.1A ;IB=0
140
V
VCEsat-1
Collector-emitter saturation voltage
IC=1.0A;IB=0.1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=2.5A;IB=0.5A
2.0
V
VBE-1
Base-emitter on voltage
IC=1.0A ; VCE=4V
1.8
V
VBE-2
Base-emitter on voltage
IC=2.5A ; VCE=4V
3.0
V
2N6477
VCE=130V
VCE=120V; TC=150℃
2.0
10
ICEX
Collector cut-off current
VBE=-1.5V
2N6478
VCE=150V
VCE=140V; TC=150℃
2.0
10
mA
2N6477
VCE=80V;IB=0
ICEO
Collector cut-off current
2N6478
VCE=100V;IB=0
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.0
mA
hFE-1
DC current gain
IC=1.0A ; VCE=4V
25
150
hFE-2
DC current gain
IC=2.5A ; VCE=4V
5
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
250
pF
fT
Transition frequency
IC=0.5A ; VCE=4V
0.2
MHz



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