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2N6327 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6327 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6326 2N6327 2N6328 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6326 60 2N6327 80 VCEO(SUS) Collector-emitter sustaining voltage 2N6328 IC=0.2 A ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=15A; IB=1.5A 1.2 V VBEsat Base-emitter saturation voltage IC=15A; IB=1.5A 1.5 V VBE Base-emitter on voltage IC=8A ; VCE=4V 1.5 V 2N6326 VCB=60V; IE=0 TC=150℃ 1.0 5.0 2N6327 VCB=80V; IE=0 TC=150℃ 1.0 5.0 ICBO Collector cut-off current 2N6328 VCB=100V; IE=0 TC=150℃ 1.0 5.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=8A ; VCE=4V 25 hFE-2 DC current gain IC=30A ; VCE=4V 6 30 fT Transition frequency IC=1A ; VCE=10V;f=1.0MHz 3 MHz |
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