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2N6291 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2N6291
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6291 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6291 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6291 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6291 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N6291 2N6293
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6291
50
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6293
IC=0.1A ;IB=0
70
V
2N6291
IC=2.5A;IB=0.25A
VCEsat-1
Collector-emitter
saturation voltage
2N6293
IC=2A;IB=0.2A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A;IB=3A
3.5
V
2N6291
IC=2.5A ; VCE=4V
VBE-1
Base-emitter
on voltage
2N6293
IC=2A ; VCE=4V
1.5
V
VBE-2
Base-emitter on voltage
IC=7A ; VCE=4V
3.0
V
2N6291
VCE=40V; IB=0
ICEO
Collector
cut-off current
2N6293
VCE=60V; IB=0
1.0
mA
2N6291
VCE=56V; VBE=-1.5V
VCE=50V; BE=-1.5V,TC=150℃
0.1
2.0
ICEX
Collector
cut-off current
2N6293
VCE=75V; VBE=-1.5V
VCE=70V; BE=-1.5V,TC=150℃
0.1
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
2N6291
IC=2.5A ; VCE=4V
hFE-1
DC current gain
2N6293
IC=2A ; VCE=4V
30
150
hFE-2
DC current gain
IC=7A ; VCE=4V
2.3
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
250
pF
fT
Transition frequency
IC=0.5A ; VCE=4V;f=1MHz
10
MHz



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