2N6290 datasheet(1/3 Pages) ISC

No de pièce	2N6290

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6288 2N6290 2N6292

DESCRIPTION

・With TO-220 package

・Complement to PNP type:

2N6107; 2N6109 ;2N6111

APPLICATIONS

・Power amplifier and switching

circuits applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6288

40

2N6290

60

VCBO

Collector-base voltage

2N6292

Open emitter

80

V

2N6288

30

2N6290

50

VCEO

Collector-emitter voltage

2N6292

Open base

70

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

7

A

ICM

Collector current-peak

10

A

IB

Base current

3

A

PT

Total power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

3.125

℃/W

Numéro de pièce similaire - 2N6290

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	2N6290	171Kb / 4P	POWER TRANSISTORS(7A,40W)
Boca Semiconductor Corp...	2N6290	101Kb / 3P	EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
Central Semiconductor C...	2N6290	71Kb / 1P	NPN SILICON TRANSISTOR
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Savantic, Inc.	2N6290	95Kb / 3P	Silicon NPN Power Transistors

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Description similaire - 2N6290

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Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
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