2N6130 datasheet(1/3 Pages) ISC

No de pièce	2N6130

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6129 2N6130 2N6131

DESCRIPTION

・With TO-220 package

・High power dissipation

・Complement to PNP type :

2N6132 2N6133 2N6134

APPLICATIONS

・Power amplifier and medium speed

switching applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6129

40

2N6130

60

VCBO

Collector-base voltage

2N6131

Open emitter

80

V

2N6129

40

2N6130

60

VCEO

Collector-emitter voltage

2N6131

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

7

A

IB

Base current

3

A

PT

Total power dissipation

TC=25℃

50

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

2.5

℃/W

Numéro de pièce similaire - 2N6130

Fabricant	No de pièce	Fiches technique	Description
Central Semiconductor C...	2N6130	71Kb / 1P	NPN SILICON TRANSISTOR
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Description similaire - 2N6130

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2N6130 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

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