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RB495DRF Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No de pièce RB495DRF
Description  40V, 350mA, SMD Schottky Diode
PDF  3 Pages
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

RB495DRF Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  RB495DRF Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd RB495DRF Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd RB495DRF Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd  
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RB495D
40V, 350mA, SMD Schottky Diode
Small Signal Diode
Electrical Characteristics
Reverse Breakdown Voltage
IR=
Forward Voltage
IF=
IF=
Reverse Leakage Current
VR=
Junction Capacitance
Carrier & Reel specification
Dimension(mm)
Macking
User direction of Feed
Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
Embossment center
Overall tape thickness
Tape width
Reel width
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Item
Symbol
Sprocket hole
Reel outside diameter
Carrier depth
K
14.4 Max.
P1
2.00 ±0.10
T
W
W1
0.6 Max.
8.30 Max.
Type Number
100uA
10mA
25V
200mA
V
CJ
-
VF
IR
V(BR)
uA
pF
50.0
0.55
VR=0, f=1.0MHz
Symbol
-
-
40
-
Min
178 ± 1
0.32
Units
Max
-
70
P0
4.00 ±0.10
E
13.0 ± 0.5
D2
F
3.50 ±0.05
V
1.75 ±0.10
Reel inner diameter
2.40 Max.
D1
50 Min.
1.50 +0.10
D
A
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
W1
D1
D2
A
Version : E10



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