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BAS316WS Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No de pièce BAS316WS
Description  200mW, High-speed switching SMD Diode
PDF  3 Pages
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BAS316WS Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  BAS316WS Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd BAS316WS Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd BAS316WS Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd  
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BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Electrical Characteristics
I
R
= 100 uA
IF= 1.0 mA
IF= 10 mA
IF= 50 mA
IF= 150 mA
VR= 75 V
VR= 25 V
Junction Capacitance
VR=
Reverse Recovery Time
IF=IR=
Tape & Reel specification
Dimension(mm)
Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
W1
14.4 Max.
Overall tape thickness
T
0.6 Max.
Tape width
Reel width
W
8.30 Max.
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
P1
3.50 ±0.05
4.00 ±0.10
2.00 ±0.10
F
P0
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Item
Carrier depth
2.40 Max.
1.50 +0.10
D
Symbol
K
0.855
E
D2
178 ± 1
50 Min.
13.0 ± 0.5
1.75 ±0.10
A
D1
VF
0.715
Max
Units
V
V
-
Min
-
-
Type Number
Symbol
1.000
-
1.250
Forward Voltage
Reverse Breakdown Voltage
V(BR)
100
-
Reverse Leakage Current
IR
-
1.00
uA
0.03
0, f=1.0MHz
CJ
-
1.5
pF
ns
10mA, Irr=0.1 x IR,
Trr
-
4.0
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
W1
D1
D2
Aersion : A10
Version : A10



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