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MP6K31 Fiches technique(PDF) 1 Page - Rohm |
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MP6K31 Fiches technique(HTML) 1 Page - Rohm |
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1 / 7 page ![]() www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. 4V Drive Nch + Nch MOSFET MP6K31 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (MPT6). 3) Low voltage drive. (4V) Application Switching Packaging specifications Inner circuit Package Taping Code TR Basic ordering unit (pieces) 1000 MP6K31 ○ Absolute maximum ratings (Ta = 25 C) <It is the same ratings for Tr1 and Tr2.> Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS 20 V Continuous ID 2A Pulsed IDP 8A Continuous Is 1.2 A Pulsed Isp 8A 2.0 W / TOTAL 1.4 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw 10s, Duty cycle1% *2 Mounted on a ceramic board. PD Type Source current (Body Diode) Drain current Parameter Power dissipation (6) (4) (5) (1) (3) (2) (1) (2) (3) (4) (5) (6) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE *2 *1 *1 MPT6 (Dual) (1) (2) (3) (6) (5) (4) 1/6 2010.09 - Rev.A |
Numéro de pièce similaire - MP6K31 |
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Description similaire - MP6K31 |
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