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MP6K11 Fiches technique(PDF) 1 Page - Rohm

No de pièce MP6K11
Description  4V Drive Nch Nch MOSFET
PDF  7 Pages
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Fabricant  ROHM [Rohm]
Site Internet  http://www.rohm.com
Logo ROHM - Rohm

MP6K11 Fiches technique(HTML) 1 Page - Rohm

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Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4V Drive Nch + Nch MOSFET
MP6K11
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package(MPT6).
3) Low voltage drive(4V drive).
Application
Switching
Packaging specifications
Inner circuit
Package
Taping
Code
TCR
Basic ordering unit (pieces)
1000
MP6K11
Absolute maximum ratings (Ta = 25
C)
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
Continuous
ID
3.5
A
Pulsed
IDP
12
A
Continuous
Is
1.6
A
Pulsed
Isp
12
A
2.0
W / TOTAL
1.4
W / ELEMENT
Channel temperature
Tch
150
C
Range of storage temperature
Tstg
55 to 150
C
*1 Pw
10s, Duty cycle1%
*2 Mounted on a ceramic board.
PD
Type
Source current
(Body Diode)
Drain current
Parameter
Power dissipation
MPT6
(Duel)
(1)
(2)
(3)
(6)
(5)
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
*2
*1
*1
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(6)
(5)
(4)
1/6
2011.04 - Rev.A


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