BCP55 datasheet(4/7 Pages) DIODES

4 / 7 page

BCP 54 / 55 / 56

Datasheet Number: DS35367 Rev. 2 – 2

4 of 7

www.diodes.com

June 2011

BCP 54 / 55 / 56

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base

Breakdown Voltage

BCP54

BVCBO

IC = 100µA

BCP55

BCP56

100

Collector-Emitter

Breakdown Voltage (Note 6)

BCP54

BVCEO

IC = 10mA

BCP55

BCP56

Emitter-Base Breakdown Voltage

BVEBO

IE = 10µA

Collector Cut-off Current

ICBO

0.1

VCB = 30V

VCB = 30V, TA = 150°C

Emitter Cut-off Current

IEBO

VEB = 4V

Static Forward Current Transfer Ratio (Note 6)

All versions

hFE

250

IC = 5mA, VCE = 2V

IC = 150mA, VCE = 2V

IC = 500mA, VCE = 2V

10 gain grp

160

IC = 150mA, VCE = 2V

16 gain grp

100

250

IC = 150mA, VCE = 2V

Collector-Emitter Saturation Voltage (Note 6)

VCE(sat)

0.5

IC = 500mA, IB = 50mA

Base-Emitter Turn-On Voltage (Note 6)

VBE(on)

1.0

IC = 500mA, VCE = 2V

Transition Frequency

150

MHz

IC = 50mA, VCE = 10V

f = 100MHz

Output Capacitance

Cobo

VCB = 10V, f = 1MHz

Notes:

6. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

0.2

0.4

0.6

0.8

123

, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 1 Typical Collector Current

vs. Collector-Emitter Voltage

Fig. 2 Typical DC Current Gain vs. Collector Current

100

150

200

250

0.001

0.01

0.1

110

I , COLLECTOR CURRENT (A)

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