MBD301G datasheet(1/5 Pages) ONSEMI

No de pièce	MBD301G

Description	Silicon Hot-Carrier Diodes

PDF	5 Pages

Scroll/Zoom	100%

Fabricant	ONSEMI [ON Semiconductor]

Site Internet	http://www.onsemi.com

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1 / 5 page

August, 2009 − Rev. 5

1

Publication Order Number:

MBD301/D

MBD301G, MMBD301LT1G

Silicon Hot-Carrier Diodes

SCHOTTKY Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V

• Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

MBD301 MMBD301LT1

Rating

Symbol

Value

Unit

Reverse Voltage

VR

30

V

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PF

280

2.8

200

2.0

mW

mW/°C

Operating Junction

Temperature Range

TJ

−55 to +125

°C

Storage Temperature Range

Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAM

MBD

301

AYWWG

G

TO−92

(TO−226AC)

CASE 182

STYLE 1

4T M G

G

MBD301

SOT−23

(TO−236)

CASE 318

STYLE 8

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

1

2

3

1

2

3

CATHODE

1

ANODE

2

CATHODE

1

ANODE

1

MMBD301LT1

M

= Date Code

G

= Pb−Free Package

MARKING

DIAGRAM

(Note: Microdot may be in either location)

Numéro de pièce similaire - MBD301G

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ON Semiconductor	MBD301G	65Kb / 5P	Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes January, 2007 ??Rev. 4
	MBD301G	95Kb / 5P	Silicon Hot-Carrier Diodes October, 2016 ??Rev. 8
	MBD301G	237Kb / 7P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2018 - Rev. 9
	MBD301G	95Kb / 5P	Silicon Hot-Carrier Diodes October, 2016 ??Rev. 8
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Fabricant	No de pièce	Fiches technique	Description
Leshan Radio Company	MBD701	54Kb / 2P	Silicon Hot-Carrier Diodes
	MMBD301LT1	54Kb / 2P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
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ON Semiconductor	MMDL301	39Kb / 4P	Silicon Hot-Carrier Diodes January, 2000 ??Rev. 0
Leshan Radio Company	LMBD301LT1	87Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
Leshan Radio Company	LMBD301LT1G	110Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD701	128Kb / 4P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2009 ??Rev. 5
	MMDL301T1G	94Kb / 3P	Silicon Hot-Carrier Diodes September, 2010??Rev. 2
	MBD301G	95Kb / 5P	Silicon Hot-Carrier Diodes October, 2016 ??Rev. 8
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