BD810 datasheet(4/5 Pages) ONSEMI

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BD809 (NPN), BD810 (PNP)

http://onsemi.com

Figure 6. Thermal Response

t, PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

100

200 300

1000

500

qJC(t) = r(t) qJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

Note 1:

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC - VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150°C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

ORDERING INFORMATION

Device

Package

Shipping†

BD809

TO-220

50 Units / Rail

BD809G

TO-220

(Pb-Free)

BD810

TO-220

50 Units / Rail

BD810G

TO-220

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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