L6738 datasheet(21/32 Pages) STMICROELECTRONICS

21 / 32 page

L6738

High current embedded drivers

Doc ID 18133 Rev 1

21/32

Two main terms contribute in the device power dissipation: bias power and drivers' power.

●

Device Power (PDC) depends on the static consumption of the device through the

supply pins and it is simply quantifiable as follows:

●

Drivers' power is the power needed by the driver to continuously switch ON and OFF

the external MOSFETs; it is a function of the switching frequency and total gate charge

of the selected MOSFETs. It can be quantified considering that the total power PSW,

dissipated to switch the MOSFETs, is dissipated by three main factors: external gate

resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance.

This last term is the important one to be determined to calculate the device power

dissipation.

The total power dissipated to switch the MOSFETs for each phase featuring embedded

driver results:

where QGHS is the total gate charge of the HS MOSFETs and QGLS is the total gate

charge of the LS MOSFETs.

VCCDR

⋅

GHS

VCCDR

⋅

GLS

VCCDR

⋅

()

⋅

L6738 Fiches technique(PDF) 21 Page - STMicroelectronics