SSP7200N datasheet(1/2 Pages) SECOS

No de pièce	SSP7200N

Description	N-Channel Enhancement MOSFET

PDF	2 Pages

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Fabricant	SECOS [SeCoS Halbleitertechnologie GmbH]

Site Internet	http://www.secosgmbh.com

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SSP7200N

3 A, 200 V, RDS(ON) 400 m

N-Channel Enhancement MOSFET

Elektronische Bauelemente

30-Jul-2010 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process

to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in

portable and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

FEATURES



Low RDS(on) provides higher efficiency and extends battery life.



Low thermal impedance copper leadframe SOP-8PP saves board

space.



Fast switching speed.



High performance trench technology.

PRODUCT SUMMARY

VDS(V)

RDS(on) (m

ID(A)

200

400@VGS= 10V

3.0

450@VGS= 4.5V

2.8

ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

20

V

Continuous Drain Current

A

TA=25°C

ID

3

A

TA=70°C

2.4

Pulsed Drain Current

B

IDM

50

A

Continuous Source Current (Diode Conduction)

A

IS

2.3

A

Power Dissipation

A

TA=25°C

PD

5.0

W

TA=70°C

3.2

Operating Junction and Storage Temperature Range

TJ, TSTG

-55 ~ 150

°C

THERMAL RESISTANCE DATA

Maximum Junction to Ambient

A

t≦10 sec

RθJA

25

°C / W

Steady State

65

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature.



Gate



Source



Drain

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.00

1.10

θ

0

°

12

°

B

5.70

5.80

b

0.33

0.51

C

0.20

0.30

d

1.27BSC

D

3.61

3.98

e

1.35

1.75

E

5.40

6.10

g

1.10

-

F

0.08

0.20

G

3.60

3.99

SOP-8PP

B

E

F

G

g

A

e

b

θ

D

C

d

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