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MMBT2907Q Fiches technique(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT2907Q Fiches technique(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page ![]() Any changing of specification will not be informed individual MMBT2907Q PNP Silicon General Purpose Transistor TYPICAL CHARACTERISTICS Figure 3. DC Current Gain IC, Collector Current (mA) 0.3 0.5 0.7 1.0 3.0 0.2 –0.1 TJ = 125°C 25 °C –55 °C VCE = –1.0 V VCE = –10 V 2.0 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 Figure 4. Collector Saturation Region IB, Base Current (mA) –0.4 –0.6 –0.8 –1.0 –0.2 0 IC = –1.0 mA –0.005 –10 mA –0.01 –100 mA –500 mA –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 Figure 5. Turn–On Time IC, Collector Current 300 –5.0 Figure 6. Turn–Off Time IC, Collector Current (mA) –5.0 200 100 70 50 30 20 10 7.0 5.0 3.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 tr 2.0 V td @ VBE(off) = 0 V VCC = –30 V IC/IB = 10 TJ = 25°C 500 300 100 70 50 30 20 10 7.0 5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 200 tf t ′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 2 of 3 |
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