Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Diffused Junction Type Silicon Composite Varactor

AM Low Voltage Electronic Tuning Applications

Ordering number:ENN6265

SVC384

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

73099GI (KT) No.6265–1/3

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

1292

[SVC384]

Features

· Twin type varactor diode for low-voltage AM

electronic tuning use.

· Low voltage (6.5V).

· High Q.

Electrical Connection

˚C

˚C

Electrical Characteristics at Ta = 25˚C

1 : Anode

2 : Cathode

3 : Anode

SANYO : SPA

*1 : The values of interterminal capacitance represent the average of measurements for two elements.

*2 : 1MHz signal : 20mVrms

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

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o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

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o

V

e

s

r

e

v

e

RVR

3

3V

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r

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p

m

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T

n

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Jj

T

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2

1

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p

m

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T

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a

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Sg

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5

2

1

+

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t

5

5

–

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Pl

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w

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k

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BV

R

)

R

B

(

IR

A

µ

0

1

=3

3V

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r

r

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e

RIR

VR

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=

0

0

1A

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1

*

e

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r

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I

C V

1

VR

2

*

z

H

M

1

=

f

,

V

1

=*

2

8

4*

0

4

5F

p

C

V

5

.

4

VR

z

H

M

1

=

f

,

V

5

.

4

=4

6F

p

C

V

5

.

6

VR

z

H

M

1

=

f

,

V

5

.

6

=1

27

2F

p

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a

F

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QQ

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1

=

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1

=0

0

2

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R

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n

a

t

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CR

CC V

1

C

/

V

5

.

6

5

.

7

15

.

4

2

e

c

n

a

r

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l

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T

g

n

i

h

c

t

a

M

∆ m

C

n

i

m

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/

)

n

i

m

C

–

x

a

m

C

(

×

)

2

D

d

n

a

1

D

n

e

e

w

t

e

B

(

0

0

1

VR

V

5

.

6

o

t

V

1

=

0

.

2%

k

n

a

RC V

1

)

F

p

(

S5

1

5

o

t

2

8

4

T0

4

5

o

t

5

0

5

4.0

0.4

0.5

0.4

12

3

2.2

0.4

1.3

1.3

3.0

3.8nom

Anode

Anode

Cathode

1

2

3