IXFR64N60P datasheet(1/5 Pages) IXYS

No de pièce	IXFR64N60P

Description	PolarHV HiPerFET Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

Logo

1 / 5 page

DS99441E(01/06)

PolarHVTM HiPerFET

Power MOSFET

V

DSS

=

600

V

I

D25

=36

A

R

DS(on)

≤≤≤≤≤ 105 m Ω

Ω

t

rr

≤≤≤≤≤ 200

ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 3 mA

600

V

GS(th)

V

DS = VGS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ± 30 VDC, VDS = 0

± 200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

1000

µA

R

DS(on)

V

GS = 10 V, ID = IT , Note 1

105

m

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 150° C

600

V

DGR

T

J

= 25

° C to 150° C; R

GS = 1 MΩ

600

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25° C36

A

I

DM

T

C = 25° C, pulse width limited by TJM

150

A

I

AR

T

C = 25° C64

A

E

AR

T

C = 25° C80

mJ

E

AS

T

C = 25° C

3.5

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

20

V/ns

T

J

≤150° C, R

G = 2 Ω

P

D

T

C = 25° C

360

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS, 1 minute

2500

V~

T

L

1.6 mm (0.062 in.) from case for 10 s

300

° C

F

C

Mounting force

22..130/5..29

N/lb

Weight

ISOPLUS247

5

g

G = Gate

D = Drain

S = Source

ISOPLUS247 (IXFR)

E153432

(Electrically Isolated Back Surface)

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l International standard packages

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

IXFR 64N60P

Isolated back surface

Numéro de pièce similaire - IXFR64N60P

Fabricant	No de pièce	Fiches technique	Description
IXYS Corporation	IXFR64N60P	157Kb / 6P	Power MOSFET
IXYS Corporation	IXFR64N60P	157Kb / 6P	Power MOSFET

More results

Description similaire - IXFR64N60P

Fabricant	No de pièce	Fiches technique	Description
IXYS Corporation	IXFC30N60P	141Kb / 4P	PolarHV HiPerFET Power MOSFET
	IXFC36N50P	254Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFH20N80P	331Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFH44N50P	301Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFN48N60P	90Kb / 4P	PolarHV HiPerFET Power MOSFET
	IXFN80N50P	162Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFN82N60P	158Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFN100N50P	158Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFA16N50P	221Kb / 4P	PolarHV HiperFET Power MOSFET
	IXFI7N80P	146Kb / 4P	PolarHV HiPerFET Power MOSFET

More results

IXFR64N60P Fiches technique(PDF) 1 Page - IXYS Corporation

IXFR64N60P Fiches technique(HTML) 1 Page - IXYS Corporation

Numéro de pièce similaire - IXFR64N60P

Description similaire - IXFR64N60P

Html Pages

1 2 3 4 5

Fiches technique Télécharger

Lien URL