IXFN40N90P datasheet(1/4 Pages) IXYS

No de pièce	IXFN40N90P

Description	Polar Power MOSFET HiPerFET

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Fabricant	IXYS [IXYS Corporation]

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DS100062(10/08)

V

DSS

= 900V

I

D25

= 33A

R

DS(on)

≤≤≤≤≤ 210mΩ

Ω

t

rr

≤≤≤≤≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

900

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C33

A

I

DM

T

C = 25°C, pulse width limited by TJM

80

A

I

A

T

C = 25°C20

A

E

AS

T

C = 25°C

1.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

695

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.3/11.5

Nm/lb.in.

Weight

30

g

IXFN40N90P

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

900

V

GS(th)

V

DS = VGS, ID = 1mA

3.5

6.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS

50

μA

V

GS = 0V

T

J = 125°C

3 mA

R

DS(on)

V

GS = 10V, ID = 20A, Note 1

210 m

Ω

PolarTM Power MOSFET

HiPerFETTM

Preliminary Technical Information

Features

International standard package

miniBLOC, with Aluminium nitride

isolation

Avalanche Rated

Low package inductance

Fast intrinsic diode

Advantages

Low gate drive requirement

High power density

Applications:

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Laser Drivers

AC and DC motor drives

Robotics and servo controls

G

D

S

miniBLOC, SOT-227

E153432

G = Gate

D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

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