IXFC 12N80P

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

12

18

S

C

iss

2800

pF

C

oss

V

210

pF

C

rss

19

pF

t

d(on)

21

ns

t

r

V

22

ns

t

d(off)

R

62

ns

t

f

22

ns

Q

g(on)

51

nC

Q

gs

V

13

nC

Q

gd

19

nC

R

thJC

1.05

° C/W

R

thCS

0.21

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

12

A

I

SM

Repetitive

36

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

250

ns

I

RM

V

7

A

Q

RM

0.7

µC

Ref: IXYS CO 0177 R0

Note:

Bottom heatsink (Pin 4) is

electrically isolated from Pin

1,2, or 3.

Note 1: Test Current I

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and

experience, and constitute a "considered reflection" of the anticipated objective result. IXYS

reserves the right to change limits, test conditions, and dimensions without notice.

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537