IXFA10N80P datasheet(1/5 Pages) IXYS

No de pièce	IXFA10N80P

Description	PolarHV HiPerFET Power MOSFET

PDF	5 Pages

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Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

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1 / 5 page

DS99432F(08/09)

PolarHVTM HiPerFET

Power MOSFET

IXFA10N80P

IXFP10N80P

IXFQ10N80P

IXFH10N80P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

International Standard Packages

Avalanche Rated

Low Package Inductance

Easy to Drive and to Protect

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

800

V

GS(th)

V

DS = VGS, ID = 2.5mA

3.0

5.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS= 0V

25

μA

T

J = 150°C

500

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

1.1

Ω

V

DSS

= 800V

I

D25

= 10A

R

DS(on) ≤

≤≤≤≤ 1.1

Ω

t

rr

≤≤≤≤≤ 250ns

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

800

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C10

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

30

A

I

A

T

C = 25°C5

A

E

AS

T

C = 25°C

600

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

(TO-220,TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-3P

5.5

g

TO-247

6.0

g

G = Gate

D

= Drain

S = Source

TAB = Drain

TO-263 AA (IXFA)

G

S

D (TAB)

G

D

S

TO-220AB (IXFP)

D (TAB)

TO-3P (IXFQ)

G

D

S

D (TAB)

TO-247 (IXFH)

D (TAB)

G

D

S

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