IXFN26N90 datasheet(1/4 Pages) IXYS

No de pièce	IXFN26N90

Description	HiPerFET Power MOSFETs Single Die MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

Logo

1 / 4 page

DS97526F(12/08)

N-Channel Enhancement Mode

Avalanche Rated,High dv/dt, Low t

rr

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

900

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C

25N90

25

A

I

DM

T

C = 25°C, pulse width limited by TJM

25N90

100

A

I

D25

T

C = 25°C

26N90

26

A

I

DM

T

C = 25°C, pulse width limited by TJM

26N90

104

A

I

AR

T

C = 25°C

25N90

25

A

I

AR

T

C = 25°C

26N90

26

A

E

AR

T

C = 25°C64

mJ

E

AS

T

C = 25°C3

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

5

V/ns

P

D

T

C = 25°C

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.3/11.5

Nm/lb.in.

Weight

30

g

G

D

S

miniBLOC, SOT-227

E153432

G = Gate

D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

HiPerFETTM Power MOSFETs

Single Die MOSFET

Features

International standard package

miniBLOC, with Aluminium nitride

isolation

Low R

DS(ON) HDMOS

TM

process

Avalanche Rated

Low package inductance

Fast intrinsic diode

Advantages

Low gate drive requirement

High power density

Applications:

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Battery chargers

DC choppers

Temperature & lighting controls

IXFN25N90

IXFN26N90

V

DSS

I

D25

R

DS(on)

900V

25A

330m

Ω

900V

26A

300m

Ω

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

900

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.0

V

I

GSS

V

GS = ± 20V, VDS = 0V

± 200 nA

I

DSS

V

DS = 0.8 • VDSS

100

μA

V

GS = 0V

T

J = 125°C

2 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

25N90

330 m

Ω

26N90

300 m

Ω

Numéro de pièce similaire - IXFN26N90

Fabricant	No de pièce	Fiches technique	Description
IXYS Corporation	IXFN26N90	141Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET

More results

Description similaire - IXFN26N90

Fabricant	No de pièce	Fiches technique	Description
IXYS Corporation	IXFN340N06	100Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN280N07	102Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN34N100	101Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN75N50	126Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN39N90	125Kb / 4P	HiPerFET Power MOSFETs Single MOSFET Die
	IXFN60N60	71Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN130N30	162Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFL44N60	532Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN48N55	77Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN80N50	577Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET

More results

IXFN26N90 Fiches technique(PDF) 1 Page - IXYS Corporation

IXFN26N90 Fiches technique(HTML) 1 Page - IXYS Corporation

Numéro de pièce similaire - IXFN26N90

Description similaire - IXFN26N90

Html Pages

1 2 3 4

Fiches technique Télécharger

Lien URL