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4N60L-X-TN3-R Fiches technique(PDF) 1 Page - Unisonic Technologies

No de pièce 4N60L-X-TN3-R
Description  4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
PDF  8 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N60L-X-TN3-R Fiches technique(HTML) 1 Page - Unisonic Technologies

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UNISONIC TECHNOLOGIES CO., LTD
4N60
Power MOSFET
www.unisonic.com.tw
1 of 8
Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-061, N
4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
1.Gate
3.Source
2.Drain
TO-251
1
1
TO-252
TO-220
1
1
TO-220F
1
TO-220F1
TO-262
1
TO-263
1
ORDERING INFORMATION
Ordering Number
Pin Assignment
Lead Free
Halogen Free
Package
1
2
3
Packing
4N60L-x-TA3-T
4N60G-x-TA3-T
TO-220
G
D
S
Tube
4N60L-x-TF1-T
4N60G-x-TF1-T
TO-220F1
G
D
S
Tube
4N60L-x-TF3-T
4N60G-x-TF3-T
TO-220F
G
D
S
Tube
4N60L-x-TM3-T
4N60G-x-TM3-T
TO-251
G
D
S
Tube
4N60L-x-TN3-R
4N60G-x-TN3-R
TO-252
G
D
S
Tape Reel
4N60L-x-T2Q-T
4N60G-x-T2Q-T
TO-262
G
D
S
Tube
4N60L-x-TQ3-R
4N60G-x-TQ3-R
TO-263
G
D
S
Tape Reel
4N60L-x-TQ3-T
4N60G-x-TQ3-T
TO-263
G
D
S
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source


Numéro de pièce similaire - 4N60L-X-TN3-R

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Description similaire - 4N60L-X-TN3-R

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