3LN01ML-AL3-R datasheet(1/3 Pages) UTC

No de pièce	3LN01ML-AL3-R

Description	N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

3LN01M

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-285.a

N CHANNEL SILICON

MOSFET GENERAL-PURPOSE

SWITCHING DEVICE

APPLICATIONS

DESCRIPTION

The 3LN01M uses UTC advanced technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device’s general purpose is for switching device

applications.

FEATURES

* RDS(ON) = 3.7Ω @VGS = 4 V

* Ultra low gate charge ( typical 1.58 nC )

* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Gate

1.Source

3.Drain

Lead-free:

3LN01ML

Halogen-free: 3LN01MG

ORDERING INFORMATION

Ordering Number

Pin Assignment

Normal

Lead Free

Halogen-Free

Package

1

2

3

Packing

3LN01M-AL3-R

3LN01ML-AL3-R

3LN01MG-AL3-R

SOT-323

S

G

D

Tape Reel

MARKING

Numéro de pièce similaire - 3LN01ML-AL3-R

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Sanyo Semicon Device	3LN01M	41Kb / 4P	Ultrahigh-Speed Switching Applications
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ON Semiconductor	3LN01M	301Kb / 5P	Small Signal MOSFET November 2014 - Rev. 1
VBsemi Electronics Co.,...	3LN01M	1,012Kb / 8P	N-Channel 60-V (D-S) MOSFET
ON Semiconductor	3LN01M-TL-E	301Kb / 5P	Small Signal MOSFET November 2014 - Rev. 1

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3LN01ML-AL3-R Fiches technique(PDF) 1 Page - Unisonic Technologies

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