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2SD2136 Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce 2SD2136
Description  POWER TRANSISTOR
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD2136 Fiches technique(HTML) 2 Page - Unisonic Technologies

  2SD2136 Datasheet HTML 1Page - Unisonic Technologies 2SD2136 Datasheet HTML 2Page - Unisonic Technologies 2SD2136 Datasheet HTML 3Page - Unisonic Technologies 2SD2136 Datasheet HTML 4Page - Unisonic Technologies  
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2SD2136
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R204-011.B
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
3
A
Peak Collector Current
ICP
5
A
Collector Dissipation
PC
1.5
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCEO
IC=30mA, IB=0
60
V
Collect Cutoff Current
ICEO
VCE=60V, IB=0
300
µA
Collect Cutoff Current
ICES
VCE=60 V, VBE=0
200
µA
Emitter Cutoff Current
IEBO
VBE=6 V, IC=0
1
mA
hFE1
VCE=4V ,IC=1A
40
250
DC Current Gain
hFE2
VCE=4V ,IC=3A
10
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =3A, IB=0.375A
1.2
V
Base-Emitter Voltage
VBE
VCE=4V ,IC=3A
1.8
V
Current Gain Bandwidth Product
fT
VCE=15V, IE=0.1A, f =200MHz
220
MHZ
Turn On Time
tON
0.5
µS
Storage Time
tS
2.5
µS
Fall Time
tF
IC = 1A, IB1 =0.1A, IB2 =0.1A
0.4
µS
CLASSIFICATION OF hFE1
RANK
P
Q
R
RANGE
40-90
70-150
120-250



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