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2SC5353 Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce 2SC5353
Description  HIGH VOLTAGE NPN TRANSISTOR
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC5353 Fiches technique(HTML) 2 Page - Unisonic Technologies

  2SC5353 Datasheet HTML 1Page - Unisonic Technologies 2SC5353 Datasheet HTML 2Page - Unisonic Technologies 2SC5353 Datasheet HTML 3Page - Unisonic Technologies 2SC5353 Datasheet HTML 4Page - Unisonic Technologies  
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2SC5353
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-031,D
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
900
V
Collector-Emitter Voltage
VCEO
800
V
Emitter-Base Voltage
VEBO
7
V
DC
IC
3
Collector Current
Pulse
ICP
5
A
Base Current
IB
1
A
TO-220F/ TO-126/TO-126C
20
Collector Power Dissipation
TO-220
PD
25
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc = 25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC=1 mA, IE = 0
900
V
Collector-Emitter Breakdown Voltage
BVCEO IC=10 mA, IB = 0
800
V
Collector Cut-off Current
ICBO
VCB=720V, IE= 0
100
µA
Emitter Cut-off Current
IEBO
VEB=7V, IC= 0
10
µA
hFE1
VCE=5 V, IC=1 mA
10
DC Current Gain
hFE2
VCE=5 V, IC=0.15 A
15
Collector-Emitter Saturation Voltage
VCE(SAT) IC=1.2 A, IB=0.24 A
1.0
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=1.2 A, IB=0.24 A
1.3
V
Rise Time
tR
0.7
Storage Time
tSTG
4.0
Switching Time
Fall Time
tF
0.5
µS



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