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2SC2688 Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce 2SC2688
Description  NPN SILICON TRANSISTOR
PDF  5 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC2688 Fiches technique(HTML) 2 Page - Unisonic Technologies

  2SC2688 Datasheet HTML 1Page - Unisonic Technologies 2SC2688 Datasheet HTML 2Page - Unisonic Technologies 2SC2688 Datasheet HTML 3Page - Unisonic Technologies 2SC2688 Datasheet HTML 4Page - Unisonic Technologies 2SC2688 Datasheet HTML 5Page - Unisonic Technologies  
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2SC2688
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R204-023,C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
300
V
Collector to Emitter Voltage
VCEO
300
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current
IC
200
mA
Ta=25℃
1.25
W
Total Power Dissipation
TC=25℃
PD
10
W
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Saturation Voltage
VCE(SAT)
IC=20mA, IB=5.0mA
1.5
V
Collector Cutoff Current
ICBO
VCB=200V, IE=0
100
nA
Emitter Cutoff Current
IEBO
VEB=5.0V, IC=0
100
nA
DC Current Gain
hFE
VCE=10V, IC=10mA (Note 1)
40
80
250
Gain Bandwidth Product
fT
VCE=30V, IE=-10mA
50
80
MHz
Feedback Capacitance
Cre
VCB=30V, IE=0, f=1.0MHz
3
pF
Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2%
CLASSIFICATION OF hFE
Rank
N
M
L
K
Range
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 250



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