2SB1198L-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB1198

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-040,B

ABSOLUTE MAXIMUM RATING ( Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-80

Collector-Emitter Voltage

VCEO

-80

Emitter-Base Voltage

VEBO

-5

Collector Current

-0.5

Collector Power Dissipation

0.2

Junction Temperature

150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range

and assured by design from –20℃~85℃.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

BVCBO

IC= -50μA

-80

Collector Emitter Breakdown Voltage

BVCEO

IC= -2mA

-80

Emitter Base Breakdown Voltage

BVEBO

IE= -50μA

-5

Collector Cut-Off Current

ICBO

VCB= -50V

-0.5

μA

Emitter Cut-Off Current

IEBO

VEB= -4V

-0.5

μA

Collector-Emitter Saturation Voltage

VCE(sat)

IC/IB= -0.5A/-50mA

-0.2

-0.5

DC Current Transfer Ratio

hFE

VCE= -3V, IC= -0.1A

120

390

Transition Frequency

VCE=-10V, IE= 50 mA, f=100MHz

180

MHz

Output Capacitance

Cob

VCB= -10V, IE= 0 A, f=1MHz

CLASSIFICATION OF hFE

RANK

RANGE

120-270

180-390

MARKING

AKQ

AKR

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