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2N80G-TN3-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
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2N80G-TN3-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-480.a 2 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N80 is universally applied in high efficiency switch mode power supply. FEATURES * 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 2N80L-TF3-T 2N80G-TF3-T TO-220F G D S Tube 2N80L-TN3-R 2N80G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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