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MIC4102 Fiches technique(PDF) 9 Page - MIC GROUP RECTIFIERS |
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MIC4102 Fiches technique(HTML) 9 Page - MIC GROUP RECTIFIERS |
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9 / 17 page ![]() Micrel, Inc. MIC4102 November 2006 9 M9999-112806 Functional Diagram 1 5 6 8 4 3 2 VSS DRIVER UVLO UVLO LEVEL SHIFT DRIVER HV LEVEL SHIFT HB HO HS LO PWM VDD LS 7 Figure 1. MIC4102 Functional Block Diagram Functional Description The MIC4102 is a high voltage, non-inverting, synchronous MOSFET driver that uses a single PWM input signal to alternately drive both high-side and low- side N-Channel MOSFETs. The block diagram of the MIC4102 is shown in Figure 1. The MIC4102 input is TTL compatible. The high-side output buffer includes a high speed level-shifting circuit that is referenced to the HS pin. An internal diode is used as part of a bootstrap circuit to provide the drive voltage for the high-side output. Startup and UVLO The UVLO circuit forces both driver outputs low until the supply voltage exceeds the UVLO threshold. The low- side UVLO circuit monitors the voltage between the VDD and VSS pins. The high-side UVLO circuit monitors the voltage between the HB and HS pins. Hysteresis in the UVLO circuit prevents noise and finite circuit impedance from causing chatter during turn-on. The VDD pin voltage is supplied to the HS pin through the internal bootstrap diode. The HB pin voltage will always be a diode drop less than VDD. Input Stage The MIC4102 utilizes a TTL compatible input stage. The PWM input pin is referenced to the VSS pin. The voltage state of the input signal does not change the quiescent current draw of the driver. The threshold level is independent of the VDD supply voltage and there is no dependence between IVDD and the input signal amplitude. This feature makes the MIC4102 an excellent level translator that will drive high threshold MOSFETs from a low voltage PWM IC. Low-Side Driver A block diagram of the low-side driver is shown in Figure 2. The low-side driver is designed to drive a ground (Vss pin) referenced N-channel MOSFET. Low driver impedances allow the external MOSFET to be turned on and off quickly. The rail-to-rail drive capability of the output ensures a low Rdson from the external MOSFET. A low level applied to PWM pin will cause the HO output to go low and the LO output to go high. The upper driver FET turns on and Vdd is applied to the gate of the external MOSFET. A high level on the PWM pin forces the LO output low by turning off the upper driver and turning on the lower driver which ground the gate of the external MOSFET. Pulling the LS pin low disables the LO pin. |
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