SPST Non-Reflective AlGaAs PIN Diode Switch

V5

MA4AGSW1A

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

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• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

FEATURES

♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz

♦ Functional Bandwidth : 50 MHz to 70 GHz

♦ 0.5 dB Insertion Loss at 50GHz

♦ 46 dB Isolation at 50 GHz

♦ Low Current consumption.

• -10mA /1.35V for low loss state

•+10mA /1.35V for Isolation state

♦ Silicon Nitride Passivation

♦ Polymer Scratch protection

♦ RoHS Compliant

DESCRIPTION

M/A-COM’s, MA4AGSW1A is an Aluminum-Gallium-

Arsenide, single pole, single throw (SPST), absorptive

PIN diode switch. The switch features enhanced AlGaAs

anodes which are formed using M/A-COM’s patented

hetero-junction technology. AlGaAs technology produces

a switch with less loss than a device fabricated using

conventional GaAs processes. As much as a 0.3dB

reduction in insertion loss can be realized at 50GHz. This

device is fabricated on an OMCVD epitaxial wafer using

a process designed for high device uniformity and

extremely low parasitics. The PIN diodes within the chip

exhibit low series resistance, low capacitance, and fast

switching speed. They are fully passivated with silicon

nitride and have an additional polymer layer for scratch

protection. The protective coating prevents damage

during handling and assembly to the diode junction as

well as the anode air-bridges . Off chip bias circuitry will

be required.

APPLICATIONS

The output port of this device, J2, is terminated into 50Ω

during isolation mode, which allows this signal to be

absorbed rather than reflected back. This functionality

makes it ideal for instrumentation and radar applications.

An absorptive switch can be added to other AlGaAs

reflective switches to improve isolation VSWR and

increase isolation magnitude. The ultra low capacitance

of the PIN diodes makes it ideal for usage in low loss and

high isolation microwave and millimeter wave switch

designs through 70 GHz. The lower series resistance of

the AlGaAs diodes reduces the total insertion loss and

distortion of the device. AlGaAs PIN switches are used in

applications such as switching arrays for radar systems,

radiometers, and other multi-function components.

Maximum combined operating conditions for RF Power, D.C. bias,

and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85°C.

Yellow areas indicate bond pads

Parameter

Maximum Rating

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Incident C.W. RF Power

+23dBm C.W.

Breakdown Voltage

25V

Bias Current

± 25mA

Assembly Temperature

+300°C < 10 sec

Junction Temperature

+175°C