KSA708 datasheet(1/2 Pages) WEITRON

No de pièce	KSA708

Description	PNP Plastic-Encapsulate Transistor

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Fabricant	WEITRON [Weitron Technology]

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WEITRON

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23-Feb-2011

PNP Plastic-Encapsulate Transistor

TO-92

KSA708

WEITRON

Lead(Pb)-Free

P b

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES :

• Low Saturation Medium Current Application

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Units

Collector-Base Voltage

ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Units

MAX

TYP

CLASSIFICATION OF hFE

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

VCBO

VCEO

VEBO

IC

PC

RθJA

TJ

Tstg

-80

-60

-8

-0.7

0.8

156

150

-55 to +150

V

A

W

°C/W

°C

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition Frequency

Collector output capacitance

DC current gain

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE

IEBO

VCE(sat)

VBE(sat)

f T

Cob

IC=-0.5A,I B = -50mA

VCE=-10V,IC=-50mA

IC=-0.5A, IB=-50mA

IC= -0.1mA, IE=0

VCE= -2V, I C= -50mA

VEB= -5V, IC=0

VCB= -60V, I E=0

IE= -0.1mA, IC=0

IC= -10mA, IB=0

-80

-60

-8

-0.1

240

-0.7

-1.1

50

40

13

V

µA

V

pF

MHz

Y

O

R

Rank

Range

120-240

70-140

40-80

f=1MHz

VCB=-10V, I E =0,

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