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ZXTP25040DFH Fiches technique(PDF) 4 Page - Diodes Incorporated

No de pièce ZXTP25040DFH
Description  40V SOT23 PNP medium power transistor
PDF  6 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP25040DFH Fiches technique(HTML) 4 Page - Diodes Incorporated

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ZXTP25040DFH
Issue 5 - March 2008
4
www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BVCBO
-45
-75
V
IC = -100 A
Collector-emitter breakdown
voltage (base open)
BVCEO
-40
-65
V
IC = -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Emitter-collector breakdown
voltage (reverse blocking)
BVECO
-3
-8.7
V
IE = -100uA
Emitter-base breakdown
voltage
BVEBO
-7
-8.2
V
IE = -100 A
Collector cut-off current
ICBO
<-1
-50
-0.5
nA
A
VCB = -45V
VCB = -45V, Tamb= 100°C
Emitter cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat)
-170
-260
mV
IC = -1A, IB = -20mA
(*)
-65
-85
mV
IC = -1A, IB = -100mA
(*)
-165
-220
mV
IC = -3A, IB = -300mA
(*)
Base-emitter saturation
voltage
VBE(sat)
-930
-1000
mV
IC = -3A, IB = -300mA
(*)
Base-emitter turn-on voltage VBE(on)
-830
-900
mV
IC = -3A, VCE = -2V
(*)
Static forward current
transfer ratio
hFE
300
450
900
IC = -10mA, VCE = -2V
(*)
200
300
IC = -1A, VCE = -2V
(*)
30
60
IC = -3A, VCE = -2V
(*)
Transition frequency
fT
270
MHz
IC = -50mA, VCE = -10V
f = 100MHz
Output capacitance
COBO
17.4
pF
VCB = -10V, f = 1MHz
(*)
Turn-on time
t(on)
75.5
ns
VCC = -15V. IC = -750mA,
IB1 = IB2= -15mA.
Turn-off time
t(off)
320
ns



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