ZXTP25020DFH datasheet(4/6 Pages) DIODES

4 / 6 page

ZXTP25020DFH

Issue 1 - July 2006

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

BVCBO

-25

-55

IC = -100 A

Collector-emitter breakdown

voltage (base open)

BVCEO

-20

-45

IC = -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

Emitter-base breakdown

voltage

BVEBO

-7

-8.3

IE = -100 A

Emitter-collector breakdown

voltage (reverse blocking)

BVECO

-4

-8.5

IC = -100 A(*)

Collector cut-off current

ICBO

<-1

-50

VCB = -20V

-20

VCB = -20V, Tamb= 100°C

Emitter cut-off current

IEBO

<-1

-50

VEB = -5.6V

Collector-emitter saturation

voltage

VCE(sat)

-50

-60

IC = -1A, IB = -100mA(*)

-150

-210

IC = -1A, IB = -10mA(*)

-180

-240

IC = -2A, IB = -40mA(*)

-155

-180

IC = -4A, IB = -400mA(*)

Base-emitter saturation

voltage

VBE(sat)

-960

-1050

IC = -4A, IB = -400mA(*)

Base-emitter turn-on

voltage

VBE(on)

-815

-900

IC = -4A, VCE = -2V(*)

Static forward current

transfer ratio

hFE

300

450

900

IC = -10mA, VCE = -2V(*)

200

310

IC = -1A, VCE = -2V(*)

100

IC = -4A, VCE = -2V(*)

IC = -10A, VCE = -2V(*)

Transition frequency

290

MHz

IC = -50mA, VCE = -10V

f = 50MHz

Output capacitance

COBO

VCB = -10V, f = 1MHz(*)

Delay time

t(d)

14.2

VCC = -10V. IC = -1A, IB1

= IB2= -50mA.

Rise time

t(r)

16.3

Storage time

t(s)

186

Fall time

t(f)

32.7

ZXTP25020DFH Fiches technique(PDF) 4 Page - Diodes Incorporated

ZXTP25020DFH Fiches technique(HTML) 4 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6

Fiches technique Télécharger

Lien URL