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BFS17N Fiches technique(PDF) 3 Page - Diodes Incorporated

No de pièce BFS17N
Description  NPN RF TRANSISTOR IN SOT-23
PDF  6 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BFS17N Fiches technique(HTML) 3 Page - Diodes Incorporated

  BFS17N Datasheet HTML 1Page - Diodes Incorporated BFS17N Datasheet HTML 2Page - Diodes Incorporated BFS17N Datasheet HTML 3Page - Diodes Incorporated BFS17N Datasheet HTML 4Page - Diodes Incorporated BFS17N Datasheet HTML 5Page - Diodes Incorporated BFS17N Datasheet HTML 6Page - Diodes Incorporated  
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BFS17N
Document Number DS32160 Rev. 2 - 2
3 of 6
www.diodes.com
August 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
BFS17N
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
20
−
−
V
IC = 10µA
Collector-Emitter Breakdown Voltage (Note 5)
V(BR)CEO
11
−
−
V
IC = 1mA
Emitter-Base Breakdown Voltage
V(BR)EBO
3
−
−
V
IE = 10µA
Collector Cutoff Current
ICBO
−
−
0.5
µA
VCB = 10V
Emitter Cutoff Current
IEBO
−
−
0.5
µA
VEB = 2V
Static Forward Current Transfer Ratio (Note 5)
hFE
56
−
180
−
IC = 5mA, VCE = 10V
Collector-Emitter Saturation Voltage (Note 5)
VCE(sat)
−
−
0.5
V
IC = 25mA, IB = 5mA
Transition Frequency (Note 5)
fT
1.4
3.2
−
GHz
IE = 25mA, VCE = 5V,
f = 500MHz
Collector Output Capacitance (Note 5)
Cob
−
0.8
1.5
pF
VCB = 10V, f = 1MHz
Notes:
5. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle
≤ 2%



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