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FMMT620TC Fiches technique(PDF) 2 Page - Diodes Incorporated

No de pièce FMMT620TC
Description  80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
PDF  7 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT620TC Fiches technique(HTML) 2 Page - Diodes Incorporated

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FMMT620
Document number DS32123 Rev. 2 - 2
2 of 7
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT620
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1.5
A
Peak Pulse Current
ICM
5
A
Base Current
IB
500
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation at TA = 25°C (Note 3)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at TA = 25°C (Note 4)
Linear Derating Factor
PD
625
6.4
mW
mW/°C
Junction to Ambient (Note 3)
RθJA
200
°C/W
Junction to Lead (Note 4)
RθJA
155
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
3. For device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions
4. For device mounted on FR-4 PCB measured at t
≤ 5 Secs.



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