STTH1L06 datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

Characteristics

STTH1L06

2/9

Doc ID 8321 Rev 4

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.89 x IF(AV) + 0.165 IF

(RMS)

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS) Forward rms voltage

DO-41

SMA / SMB

IF(AV)

Average forward current

δ = 0.5

DO-41

Tc = 120 °C

SMA

Tc = 135 °C

SMB

Tc = 145 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal DO-41

tp = 10 ms sinusoidal SMA / SMB

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value (max)

Unit

Rth(j-l)

Junction to lead

L = 10 mm

DO-41

°C/W

SMA

SMB

Rth(j-a)

Junction to ambient (1)

L = 10 mm

DO-41

Rth(j-a) is measured with a copper area S = 5 cm2 (see Figure 14.)

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Reverse leakage current

Tj = 25 °C

VR = 600 V

µA

Tj = 150 °C

Forward voltage drop

Tj = 25 °C

IF = 1 A

1.3

Tj = 150 °C

0.85

1.05

STTH1L06 Fiches technique(PDF) 2 Page - STMicroelectronics

STTH1L06 Fiches technique(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Fiches technique Télécharger

Lien URL