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STPS10120CFP Fiches technique(PDF) 1 Page - STMicroelectronics |
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STPS10120CFP Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() July 2007 Rev 1 1/8 8 STPS10120C Power Schottky rectifier Feature and benefits ■ High junction temperature capability ■ Good trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package – TO-220FPAB Insulating voltage = 2000 V Typical package capacitance 12 pF Description Dual center tap Schottky rectifier suited for high frequency switch mode power supplies. Table 1. Main product characteristics IF(AV) 2 x 5 A VRRM 120 V Tj(max) 175° C VF(typ) 0.64 V Table 2. Order code Part number Marking STPS10120CT STPS10120CT STPS10120CFP STPS10120CFP K A2 A1 TO-220AB STPS10120CT K K A2 A1 K A1 A2 TO-220FPAB STPS10120CFP Table 3. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 120 V IF(RMS) RMS forward current 30 A IF(AV) Average forward current, δ = 0.5 TO-220AB Tc = 160° C Per diode Per device 5 A Tc = 150° C 10 TO-220FPAB Tc = 150° C Per diode Per device 5 Tc = 135° C 10 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 120 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25° C 3000 W Tstg Storage temperature range -65 to + 175 ° C Tj Maximum operating junction temperature(1) 1. condition to avoid thermal runaway for a diode on its own heatsink 175 ° C dV/dt Critical rate of rise of reverse voltage 10000 V/µs dPtot dTj --------------- 1 Rth j a – () -------------------------- < www.st.com |
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