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STPS61L45CW Fiches technique(PDF) 4 Page - STMicroelectronics |
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STPS61L45CW Fiches technique(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STPS61L45C 4/8 Figure 7. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8. Junction capacitance versus reverse voltage applied (typical values, per diode) Figure 9. Forward voltage drop versus forward current (per diode) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 5 10 15 20 25 30 35 40 45 T j=150°C T j=125°C T j=25°C T j=100°C T j=75°C T j=50°C I (mA) R V (V) R 0.10 1.00 10.00 1 10 100 F=1MHz V OSC=30mVRMS T j=25°C C(nF) V (V) R 0 20 40 60 80 100 120 140 160 180 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 T j=25°C (Maximum values) T j=125°C (Maximum values) T j=125°C (Maximum values) T j=125°C (Typical values) T j=125°C (Typical values) V (V) FM I (A) FM |
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