STU6NF10 datasheet(1/14 Pages) STMICROELECTRONICS

No de pièce	STU6NF10

Description	N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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1 / 14 page

November 2008

Rev 6

1/14

14

STD6NF10

STU6NF10

N-channel 100 V, 0.22

Ω, 6 A, DPAK, IPAK

low gate charge STripFET™ Power MOSFET

Features

■ Exceptional dv/dt capability

■ 100% avalanche tested

Application

■ Switching applications

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET process has

specifically been designed to minimize input

capacitance and gate charge. It is therefore

suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC

converters for telecom and computer applications.

It is also intended for any applications with low

gate drive requirements.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on) max

ID

STD6NF10

100 V

< 0.250

Ω

6 A

STU6NF10

100 V

< 0.250

Ω

6 A

DPAK

3

2

1

3

IPAK

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STD6NF10T4

D6NF10

DPAK

Tape and reel

STU6NF10

6NF10

IPAK

Tube

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	STD70N2LH5	232Kb / 12P	N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET??V Power MOSFET 23-Sep-2008
	STD95N2LH5	351Kb / 15P	N-channel 25 V, 0.0038 Ω, 80 A - DPAK - IPAK STripFET??V Power MOSFET 23-Sep-2008
	STD12NF06	341Kb / 14P	N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET 26-Nov-2009

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