A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

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Specifications are subject to change without notice.

SYMBOL

MINIMUM TYPICAL MAXIMUM

UNITS

30

V

Ω

40

V

3.5

V

10

mA

25

120

---

ηηηη

C

f = 860 MHz

8.5

55

dB

NPN SILICON RF POWER TRANSISTOR

SD4100

DESCRIPTION:

The

RF power transistor designed for high

linearity Class-AB operation in UHF

and band IV and V for TV transmitters.

It utilizes emitter ballasting for high

reliability and ruggedness.

FEATURES:

• Common Emitter, Class AB push-pull

• P

• Omnigold™ Metalization System

• 28 V operations

MAXIMUM RATINGS

16 A

65 V

30 V

-65 °C to +200 °C

-65 °C to +150 °C

θθθθ

JC

0.8 °C/W

PACKAGE STYLE .450 BAL FLG(A)

1 = COLLECTOR 2 = BASE 3 = EMITTER

MINIMUM

inches / mm

.455 / 11.56

B

C

D

E

F

G

A

MAXIMUM

.120 / 3.05

.465 / 11.81

inches / mm

H

DIM

L

M

J

K

1.095 / 27.81

.002 / 0.05

.080 . 2.03

1.105 / 28.07

.005 / 0.15

.095 / 2.41

P

N

.455 / 11.56

.195 / 4.95

.445 / 11.30

.055 / 1.40

.065 / 1.65

K

J

G

H

F

C

D

E

L

M

N

P

.060x45°

B

A

FULL R

.100x45°

.130 / 3.30

.785 / 19.94

.055 / 1.40

.230 / 5.84

.525 / 13.34

.535 / 13.59

.120 / 3.05

.130 / 3.30

.838 / 21.28

.850 / 21.59

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