MS2608 datasheet(1/1 Pages) ASI

No de pièce	MS2608

Description	NPN SILICON RF MICROWAVE TRANSISTOR

PDF	1 Pages

Scroll/Zoom	100%

Fabricant	ASI [Advanced Semiconductor]

Site Internet	http://www.advancedsemiconductor.com

Logo

1 / 1 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 7.0 mA

55

V

BVCER

IC = 7.0 mA

RBE = 10 Ω

55

V

BVEBO

IE = 1.0 mA

3.5

V

ICES

VCE = 40 V

5.0

mA

hFE

VCE = 5.0 V

IC = 600 mA

30

150

---

PG

η

C

VCC = 40 V

POUT = 12 W

f = 2.7 to 3.1 GHz

6.0

30

dB

%

Note:

Pulse Widht = 100 µS

Duty Cycle = 10 %

NPN SILICON RF MICROWAVE TRANSISTOR

MS2608

DESCRIPTION:

The ASI MS2608 is Designed for pulsed S-

Band radar applications from 2.7 to 3.1 GHz.

FEATURES:

• Internal Input/Output Matching Network

• P

G = 6.0 dB at 12 W/2.7-3.1 GHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

2.0 A

VCC

46 V

PDISS

50 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +200 °C

θ

JC

4.0 °OC/W

PACKAGE STYLE .400 2L FLG

1 = COLLECTOR

2&3 = BASE

4 = EMITTER

MINIMUM

inches / m m

.395 / 10.03

.140 / 3.56

B

C

D

E

F

G

A

M AXIM UM

.230 / 5.84

.407 / 10.34

inches / m m

H

.118 / 3.00

.131 / 3.33

DIM

K

L

I

J

.386 / 9.80

O

P

Q

R

N

M

.450 / 11.43

.050 / 1.27

.110 / 2.80

.193 / 4.90

.003 / 0.08

.006 / 0.15

.900 / 22.86

.650 / 16.51

.063 / 1.60

.125 / 3.18

.170 / 4.32

.062 / 1.58

.405 / 10.29

.110 / 2.80

J

P

G

M

C

B

D

H

F

N

Q

I

O

K

E

Ø.120

A

.062 x 45°

R

L

1

2

3

4

Numéro de pièce similaire - MS2608

Fabricant	No de pièce	Fiches technique	Description
List of Unclassifed Man...	MS260	233Kb / 2P	Power Film Resistors
Caddock Electronics, In...	MS260	400Kb / 2P	Type MS Power Film Resistors
Advanced Semiconductor	MS2601	46Kb / 1P	NPN RF POWER TRANSISTOR
Advanced Power Technolo...	MS2604	120Kb / 3P	RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS

More results

Description similaire - MS2608

Fabricant	No de pièce	Fiches technique	Description
Tyco Electronics	MRF10350	147Kb / 4P	MICROWAVE POWER TRANSISTOR NPN SILICON
Tyco Electronics	MRF1090MA	127Kb / 4P	MICROWAVE POWER TRANSISTOR NPN SILICON
Advanced Semiconductor	TPR175	23Kb / 1P	NPN SILICON RF-MICROWAVE POWER TRANSISTOR REV. B
	MSC80917	78Kb / 1P	NPN SILICON RF MICROWAVE TRANSISTOR
	NE64700	18Kb / 1P	NPN SILICON MICROWAVE TRANSISTOR REV. A
NTE Electronics	NTE359	72Kb / 2P	Silicon NPN Transistor RF & Microwave Transistor
M/A-COM Technology Solu...	MRF10031	195Kb / 5P	Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor
Advanced Semiconductor	MRF5812	27Kb / 1P	NPN SILICON RF MICROWAVE TRANSISTOR REV. A
Advanced Semiconductor	MSC1004M	40Kb / 1P	NPN SILICON RF MICROWAVE TRANSISTOR
M/A-COM Technology Solu...	MRF10031	642Kb / 6P	Microwave Power Silicon NPN Transistor

More results

MS2608 Fiches technique(PDF) 1 Page - Advanced Semiconductor

MS2608 Fiches technique(HTML) 1 Page - Advanced Semiconductor

Numéro de pièce similaire - MS2608

Description similaire - MS2608

Html Pages

1

Fiches technique Télécharger

Lien URL