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2SD1691 Fiches technique(PDF) 3 Page - Renesas Technology Corp

No de pièce 2SD1691
Description  SILICON POWER TRANSISTOR
PDF  6 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD1691 Fiches technique(HTML) 3 Page - Renesas Technology Corp

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16190EJ1V1DS00 (1st edition)
Date Published December 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1691
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
FEATURES
• Large current capacity and low VCE(sat):
IC(DC) = 5.0 A, IC(pulse) = 8.0 A
VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)
• Large power dissipation TO-126 type power transistor
PT = 1.3 W (@Ta = 25
°C), 20 W (@Tc = 25°C)
• Complementary transistor: 2SB1151
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)*
8.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (Ta = 25
°C)
1.3
W
Total power dissipation
PT (Tc = 25
°C)
20
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
10
µA
Emitter cutoff current
IEBO
VEB = 7.0 V, IC = 0
10
µA
DC current gain
hFE1**
VCE = 1.0 V, IC = 0.1 A
60
DC current gain
hFE2**
VCE = 1.0 V, IC = 2.0 A
100
400
DC current gain
hFE3**
VCE = 1.0 V, IC = 5.0 A
50
Collector saturation voltage
VCE(sat)**
IC = 2.0 A, IB = 0.2 A
0.1
0.3
V
Base saturation voltage
VBE(sat)**
IC = 2.0 A, IB = 0.2 A
0.9
1.2
V
Turn-on time
ton
0.2
1.0
µs
Storage time
tstg
1.1
2.5
µs
Fall time
tf
IC = 2.0 A, IB1 =
−IB2 = 0.2 A
RL = 5.0
Ω, VCC ≅ 10 V
0.2
1.0
µs
** Pulse test PW
≤ 350
µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
160 to 320
200 to 400



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