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STL128DNFP Fiches technique(PDF) 1 Page - STMicroelectronics |
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STL128DNFP Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() October 2009 Doc ID 13984 Rev 3 1/14 14 STL128DN High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Large RBSOA ■ Integrated antiparallel collector-emitter diode Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low power converters Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Figure 1. Internal schematic diagram TO-220 1 2 3 TAB 1 2 3 TO-220FP 1 3 TO-252 (DPAK) TAB Table 1. Device summary Order codes Marking Packages Packaging STL128DN L128DN TO-220 Tube STL128DNFP L128DNFP TO-220FP Tube STLD128DNT4 LD128DN DPAK Tape and reel www.st.com |
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