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STB80NF10 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STB80NF10
Description  N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET
PDF  14 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB80NF10 Fiches technique(HTML) 5 Page - STMicroelectronics

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STB80NF10, STP80NF10
Electrical characteristics
Doc ID 6958 Rev 18
5/14
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
-
80
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
320
A
VSD
(2)
2.
Pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 80 A, VGS = 0
-
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80 A, VDD = 50 V
di/dt = 100 A/µs,
Tj=150 °C
-
106
450
8.5
ns
nC
A



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