BAS28 datasheet(1/12 Pages) NXP

No de pièce	BAS28

Description	High-speed double diode

PDF	12 Pages

Scroll/Zoom	100%

Fabricant	NXP [NXP Semiconductors]

Site Internet	http://www.nxp.com

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1 / 12 page

1.

Product profile

1.1 General description

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a

small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not

connected.

1.2 Features and benefits

High switching speed: trr ≤ 4ns

Reverse voltage: VR ≤ 75 V

Repetitive peak reverse voltage: VRRM ≤ 85 V

Repetitive peak forward current: IFRM ≤ 500 mA

AEC-Q101 qualified

Small SMD package

1.3 Applications

High-speed switching in e.g. surface-mounted circuits

1.4 Quick reference data

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB).

[2]

When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA.

BAS28

High-speed double diode

Rev. 3 — 22 July 2010

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF

forward current

[1] --

215

mA

IR

reverse current

VR =75V

-

1

μA

VR

reverse voltage

-

75

V

trr

reverse recovery time

[2] --

4

ns

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