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NTMFS4841NHT3G Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce NTMFS4841NHT3G
Description  Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL
PDF  7 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS4841NHT3G Fiches technique(HTML) 4 Page - ON Semiconductor

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NTMFS4841NH
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3456
Figure 1. On−Region Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 3.2 V
3.8 V
4.0 V
4.2 V
4.4 V
3.6 V
3.4 V
TJ = 25°C
4.6 V
4.8 V
5.0 V
7.0 V
10 V
0
10
20
30
40
50
60
70
80
90
12
34
5
6
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
TC = 25°C
TC = −55°C
TC = 125°C
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
11
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID = 30 A
TJ = 25°C
0.002
0.0025
0.003
0.0035
0.004
0.0045
0.005
0.0055
0.006
0.0065
0.007
0.0075
0.008
0.0085
0.009
0.0095
0.01
0.0105
0.011
0.0115
0.012
10
15
20
25
30
35
40
45
50
55
VGS = 11.5 V
VGS = 4.5 V
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
TJ = 25°C
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−55 −35 −15
5
25 45
65 85
145
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
ID = 30 A
VGS = 10 V
105
105
0.1
1
10
100
1000
10000
5
1015
2025
30
Figure 6. Drain−to−Source Leakage Current
versus Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 150°C
TJ = 125°C
TJ = 25°C



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